ANTPS-78 - Radartutorial

gan 78After the first attempts of selective area growth (SAG) of GaN [78], [79], this process has been proposed for different purposes, such as for the fabrication of non-alloyed OhmicIn this paper, a hh-efficiency compact power amplifier is desned and fabricated with a 0.25 μm GaN hh electron mobility transistor (HEMT) to meet the demands of a hh